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The Growth of Epitaxial NiSi2 Single Crystals on Silicon by the Use of Template Layers
Published online by Cambridge University Press: 15 February 2011
Abstract
A novel crystal growth technique for NiSi2 epitaxy is presented which utilizes thin silicide (<60Å) template layers to pin the subsequent growth under ultrahigh vacuum conditions. Single crystalline NiSi2 films can be grown with either type A or type B orientations on Si(111). Continuous single crystalline NiSi2 is grown on Si(100) with flat interface and uniform thickness.
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- Copyright © Materials Research Society 1982
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