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Growth of Crystalline Quality Sic on Thin and Thick Silicon-on-Insulator Structures

Published online by Cambridge University Press:  15 February 2011

F. Namavar ,
P. Colter ,
E. Gagnon ,
A. Cremins-Costa ,
D. Perry ,
P. Pirouz  and
C-H. Wu
F. Namavar
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
P. Colter
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
E. Gagnon
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
A. Cremins-Costa
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
D. Perry
Affiliation:
Purdue University, West Lafayette, IN
P. Pirouz
Affiliation:
Case Western Reserve University, Cleveland, OH
C-H. Wu
Affiliation:
Case Western Reserve University, Cleveland, OH
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Abstract

We have grown silicon carbide (SiC) on ultrathin Si (about 300Å) and on thick Si (about 2000Å) on commercial SIMOX (from IBIS Corp and SOITEC, Inc.), and bulk Si. Electron diffraction and Rutherford backscattering spectroscopy (RBS)/channeling studies indicate epitaxial growth of singlecrystal β-SiC even at growth temperatures as low as 1100°C.

We have already demonstrated the fabrication of ultrathin Si, as thin as 140Å on SiO2 by using the low-energy SIMOX (LES) (20 to 30 keV) process to produce films of lower cost and excellent integrity compared to thinned commercial SIMOX. Based on these results, ultrathin Si-on-insulator (SOI) substrates appear to have great potential for device quality SiC films. However, the carbonization and/or growth of SiC on ultrathin Si requires further optimization because the processes for surface cleaning and growth of SiC on bulk Si substrates cannot be applied because of the thinness of the substrate layers. Additional carbonization work at higher temperatures has indicated the possibility of converting the entire Si top layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 409
Copyright
Copyright © Materials Research Society 1996

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