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Growth of Amorphous and Crystalline Silicon by HR-CVD (Hydrogen Radical Enhanced CVD)

Published online by Cambridge University Press:  26 February 2011

N. Shibata ,
K. Fukuda ,
H. Ohtoshi ,
J. Hanna ,
S. Oda  and
I. Shimizu
N. Shibata
Affiliation:
Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama, Japan
K. Fukuda
Affiliation:
Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama, Japan
H. Ohtoshi
Affiliation:
Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama, Japan
J. Hanna
Affiliation:
Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama, Japan
S. Oda
Affiliation:
Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama, Japan
I. Shimizu
Affiliation:
Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama, Japan
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Abstract

Systematic studies have been made on preparation of Si thin films from SiF4 under control over the flow of atomic hydrogens. The gas phase reactions taking place in the mixture of fragments (SiFn) resulting from plasma-induced dissociation and atomic hydrogens were widely investigated by a mass spectroscopy. Chemically active species,i.e., SiF2H and SiH2F were found as those related to the growth of films. The growth in the vicinity of substrates involves either endothermic or radical-enhanced reaction for the propagation of the three dimensional Si networks, accompaning release of terminators such as H and F. Accordingly, Si thin films with structures from amorphous to crystalline were obtained by controlling the flow of atomic hydrogen. A marked improvement in the hole-transport was established in the Si films containing hydrogen less than 5–6 at % due to the reduction in the tail states near the valence band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 225
Copyright
Copyright © Materials Research Society 1987

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References

1) Ovshinsky, S. and Madan, A., Nature, 276(1978)482 Google Scholar
2) Matsumura, H., Nakagome, Y., and Furukawa, S., J.Appl.Phys.,52(1981)291 Google Scholar
3) Janai, M., Weil, R., Levin, H., Pratt, B., Kalish, G., Braunstein, G., Teicher, M. and Wolf, M., J.Appl.Phys.,52(1981)3622 Google Scholar
4) Matsumura, H. and Furukawa, S., J.Non-cryst.Solids,59&69(1983)739 Google Scholar
5) Nozawa, K., Yamaguchi, Y., Hanna, J. and Shimizu, I., Non-cryst, J., Solids, 59&60(1983)533 Google Scholar
6) Shibata, N., Hanna, J. and Shimizu, I., Ext.Abstract.Jpn.Soc.Appl.Phys. (1984) p313Google Scholar
7) Nakayama, Y., Akita, K., Haga, N., and Kawamura, T.,Jpn.J.Appl.Phys.,23(1984) L703 Google Scholar
Slobodin, U., Aljishi, s., Schwarz, R. and Wagner, S.,MRS Symp.Proc. 49(1985) 153 Google Scholar
8) Oda, S., Yamaguchi, Y., Hanna, J., Ishihara, S., Fujiwara, R., Kawate, S.,and Shimizu, I., Ext.Abst. PVSEC-I (Kobe 1984)pp429 Google Scholar
9) Oda, S., Ishihara, S., Shibata, N., Shirai, H., Miyauchi, A., Tanabe, A L., Ohtoshi, H., Hanna, J. and Shimizu, I., Jpn.J.Appl. Phys.,25(1986)L188 Google Scholar
10) Shibata, N., Tanabe, K., Hanna, J., Oda, S. and Shimizu, L., Jpn.JAppl.Phys.,25(1986)L540 Google Scholar
11) Hanna, J. et al., MRS Symp.Proc. 70( 1986)pp 11 Google Scholar
12) Shibata, N., Fukuda, K., Ohtoshi, H., Hanna, J., Oda, S. and Shimizu, I.,Jpn.J.Appl.Phys., 26(1987)L10 Google Scholar
13) Shirai, H., Tanabe, A., Oda, S., Hanna, J., Nakamura, T. and Shimizu, I.,Appl.Phys., A41,(1986)259 Google Scholar
14) Tiedje, T.,Semiconductors and Semimetals,21C(1984) ed.by Pankove, J.I., pp 207(Acadeic Press)Google Scholar