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Growth of (110) Oriented YBa2Cu3O7−δ Films by Laser Ablation

Published online by Cambridge University Press:  01 January 1992

Neng Y. Chen
Affiliation:
Delft University of Technology, Applied Physics, 2628 CJ Delft, The Netherlands
G. Rietveld
Affiliation:
Delft University of Technology, Applied Physics, 2628 CJ Delft, The Netherlands
L.W. Lander
Affiliation:
Delft University of Technology, Applied Physics, 2628 CJ Delft, The Netherlands
V.C. Matijasevic
Affiliation:
Delft University of Technology, Applied Physics, 2628 CJ Delft, The Netherlands
P. Hadley
Affiliation:
Delft University of Technology, Applied Physics, 2628 CJ Delft, The Netherlands
J.E. Mooij
Affiliation:
Delft University of Technology, Applied Physics, 2628 CJ Delft, The Netherlands
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Abstract

Several attempts have been made by different groups to grow (110) YBa2Cu3O7−δ thin films on (110) substrates. In most of the cases, both (103) and (110) orientations of YBa2Cu3O7−δ have been found in the film. The substrate temperature during deposition is one of the major factors that determines the crystal orientation of the YBa2Cu3O7−δ. In our experiment, effort is made to examine the influence of the initial substrate temperature from 595 °C to 660 °C on the relative amount of (110) and (103) oriented grains. The orientations are determined by x-ray analysis with a Weissenberg camera. The amount of (103) oriented YBa2Cu3O7−δ is reduced systematically with decreasing substrate temperature. At the lowest deposition temperatures we find only (110) oriented growth.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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