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Growth and Properties of Micro-Crystalline (Si,Ge):H Films

Published online by Cambridge University Press:  10 February 2011

Karl Erickson ,
Vikram L. Dalal  and
George Chumanov
Karl Erickson
Affiliation:
Dept. of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011, USA
Vikram L. Dalal
Affiliation:
Dept. of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011, USA
George Chumanov
Affiliation:
Dept. of Chemistry, Iowa State University, Ames, Iowa 50011, USA
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Abstract

This paper reports on the growth and characterization of micro-crystalline (Si,Ge) films deposited on glass and polyimide substrates. The films were grown using a hydrogen diluted remote ECR plasma process. The feedstock gases were silane and germane. The entire range of composition from 100% Si to 100% Ge was studied. A low-pressure, low-substrate temperature, and high-power environment was used to change the morphology from amorphous to micro-crystalline. The films deposited at 5 mT pressure are generally micro-crystalline. The film's structure was studied using Raman spectroscopy. Raman spectra show clear, sharp crystalline-type Si and Ge peaks. Electronic properties of the films, such as activation energy and absorption constant down to α = 1 cm−1 were also measured. The sub-gap absorption data also show crystalline absorption behavior, with the absorption shifting to lower energies as the Ge content is increased. This absorption data shows that the materials have low defect densities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 987
Copyright
Copyright © Materials Research Society 1998

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References

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