Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-24T23:56:04.367Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Properties of Bulk Single Crystals of GaN

Published online by Cambridge University Press:  21 February 2011

T. Suski ,
P. Perlin ,
M. Leszczyński ,
H. Teisseyre ,
I. Grzegory ,
J. Jun ,
M. Boćkowski ,
S. Porowski ,
K. Pakuła  and
A. Wysmołek
...Show all authors
T. Suski
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, tadek@iris.unipressvwaw.pl; tadek@ux5.lbl.gov
P. Perlin
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, tadek@iris.unipressvwaw.pl; tadek@ux5.lbl.gov
M. Leszczyński
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, tadek@iris.unipressvwaw.pl; tadek@ux5.lbl.gov
H. Teisseyre
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, tadek@iris.unipressvwaw.pl; tadek@ux5.lbl.gov
I. Grzegory
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, tadek@iris.unipressvwaw.pl; tadek@ux5.lbl.gov
J. Jun
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, tadek@iris.unipressvwaw.pl; tadek@ux5.lbl.gov
M. Boćkowski
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, tadek@iris.unipressvwaw.pl; tadek@ux5.lbl.gov
S. Porowski
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, tadek@iris.unipressvwaw.pl; tadek@ux5.lbl.gov
K. Pakuła
Affiliation:
Institute of Experimental Physics, Warsaw University, 00-681 Warszawa, POLAND
A. Wysmołek
Affiliation:
Institute of Experimental Physics, Warsaw University, 00-681 Warszawa, POLAND
J.M. Baranowski
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, tadek@iris.unipressvwaw.pl; tadek@ux5.lbl.gov Institute of Experimental Physics, Warsaw University, 00-681 Warszawa, POLAND
Get access

Abstract

In this paper we review recent developments in the growth of bulk GaN crystals by a high-pressure, high-temperature method. We also provide information on various physical properties of bulk GaN material. Then, some preliminary results on the homoepitaxial growth of GaN are given. In the second part of this paper we discuss the following problems: the possible origin of the large free electron concentration in undoped GaN material, the parasitic effect of yellow luminescence and the nature of Zn- and Mg-acceptors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 15
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T., and Mukai, T., Jpn. J. Appl. Phys. 34 (to be published).Google Scholar
2 Khan, M.A., Kuznia, J.N., Olson, D.T., and Kaplan, R., J. Appl. Phys. 73, 108 (1993).Google Scholar
3 Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K., and Sawaki, N., J. Cryst. Growth 98, 209 (1989).Google Scholar
4 Nakamura, S., Jpn. J. Appl. Phys. 30, L1705 (1991).Google Scholar
5 Weeks, T.W. Jr., Bremser, M.D., Ailey, K.S., Carlson, E., Perry, W.G., and Davis, R.F., Appl. Phys. Lett. 67, 401 (1995).Google Scholar
6 Ponce, F.A., Krusor, B.S., Major, J.S. Jr., Plano, W.E., and Welch, D.F., Appl. Phys. Lett. 67, 410 (1995).Google Scholar
7 Chai, B.H.T., unpublished.Google Scholar
8 Kuramata, A., Horino, K., Domen, K., Shinohara, K., and Tanahashi, T., Appl. Phys. Lett. 67, 2521 (1995).Google Scholar
9 Porowski, S., Grzegory, I., and Jun, J. in High Pressure Chemical Synthesis edited by Baranowski, B. and Jurczak, J. (Elsevier Science, Amsterdam, 1989) p. 21.Google Scholar
10 Harris, C.I., Monemar, B., Amano, H., and Akasaki, I., Appl. Phys. Lett. 67, 840 (1995).Google Scholar
11 Perlin, P., Camasel, J., Knap, W., Talercio, T., Chervin, J.C., Suski, T., Grzegory, I., and Porowski, S., Appl. Phys. Lett. 67, 2524 (1995).Google Scholar
12 Teisseyre, H., Perlin, P., Leszczynski, M., Suski, T., Grzegory, I., Jun, J., Porowski, S., and Moustakas, T.D., J. Appl Phys. 76, 2429 (1994).Google Scholar
13 Leszczynski, M., Suski, T., Teisseyre, H., Perlin, P., Grzegory, I., Jun, J., Porowski, S., and Moustakas, T.D., J. Appl Phys. 76, 4909 (1994).Google Scholar
14 Fang, S.F., Adoni, K., Iyer, S., Morkoc, H., Zabel, H., Choi, C., and Otsuka, N., J. Appl. Phys. 68, R31 (1990).Google Scholar
15 Bickmann, K. and and Hauck, J., Mater. Lett. 11, 236 (1991).Google Scholar
16 Pakula, K., Baranowski, J.M., Stepniewski, R., Wysmolek, A., Grzegory, I., Jun, J., Sawicki, M., Porowski, S., Starowiejski, K., Acta Phys. Polon. (to be published).Google Scholar
17 Shan, W., Smith, T.J., Yang, X.H., Hwang, S.J., Song, J.J., and Goldenberg, B., Appl. Phys. Lett. 66, 985 (1995).Google Scholar
18 Maruska, H.P. and Tietjen, J.J., Appl. Phys. Lett. 15, 327 (1969).Google Scholar
19 Ilegems, M. and Montgomery, M.C., J. Phys. Chem. Solids 34, 885 (1973).Google Scholar
20 Monemar, B. and Lagerstedt, O., J. Appl Phys. 50, 6480 (1979).Google Scholar
21 Tansley, T.L and Egan, R.J., Phys. Rev. B45, 10942 (1992).Google Scholar
22 Boguslawski, P., Briggs, E., and Bernholz, J., Phys. Rev. B51, 17255 (1995).Google Scholar
23 Neugebauer, J. and Van de Walle, C.G., Phys. Rev. B50, 8067 (1994).Google Scholar
24 Perlin, P., Suski, T., Teisseyre, H., Leszczynski, M., Grzegory, I., Jun, J., Porowski, S., Boguslawski, P., Bernholz, J., Chervin, J.C., Polian, A., and Moustakas, T.D., Phys. Rev. Lett. 75, 296 (1995).Google Scholar
25 Wetzel, C., Walukiewicz, W., Haller, E.E., Ager III, J., Grzegory, I., Porowski, S., and Suski, T., Phys. Rev. B (to be published).Google Scholar
26 Ogino, T. and Aoki, M., Jpn. J. Appl. Phys. 19, 2395 (1980).Google Scholar
27 Glaser, E.R., Kennedy, T..A., Doverspike, K., Rowland, L.B., Gaskill, D.K., Freitas, J.A., Khan, W. A., Olson, D.T., Kuznia, J.N., and Wickenden, D.K., Phys. Rev. B51, 13362 (1995).Google Scholar
28 Suski, T., Perlin, P., Teisseyre, H., Leszczynski, M., Grzegory, I., Jun, J., Bockowski, M., Porowski, S., and Moustakas, T.D., Appl Phys. Lett. 67, 2188 (1995).Google Scholar
29 Hofmann, D.F., Kovalev, D., Steude, G., Mayer, B.K., Hoffmann, A., Eckey, L., Heitz, R., Detchprom, T., Amano, H., and Akasaki, I., (to be published).Google Scholar
30 Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl Phys. 28, L2112 (1989).Google Scholar
31 Ilegems, M. and Dingle, R., J. Appl. Phys. 43, 3797 (1972); B. Monemar, O. Lagerstedt, and H.P. Gislason, J. Appl Phys. 51, 625 (1980).Google Scholar
32 Nakamura, S., Iwasa, N., Senoh, M., and Mukai, T.. Jpn. J. Appl. Phys. 31, 1258 (1992).Google Scholar
33 Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B10, 1237 (1992).Google Scholar
34 Teisseyre, H., Suski, T., Perlin, P., Gorczyca, I., Leszczynski, M., Grzegory, I., Jun, J., and Porowski, S., in Proc. of the 18th Int. Conf. on Defects in Semiconductors, Sendai, Japan, 1995, (to be published).Google Scholar