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Growth and Properties of (Al, Ga)As / NiAl / (Al, Ga)As: An Epitaxical Semiconductor / Metal / Semiconductor System

Published online by Cambridge University Press:  26 February 2011

T. Sands ,
J.P. Harbison ,
N. Tabatabaie ,
W.K. Chan ,
H.L. Gilchrist ,
S.A. Schwarz ,
C.L. Schwartz ,
L.T. Florez  and
V.G. Keramidas
T. Sands
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
J.P. Harbison
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
N. Tabatabaie
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
W.K. Chan
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
H.L. Gilchrist
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
S.A. Schwarz
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
C.L. Schwartz
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
L.T. Florez
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
V.G. Keramidas
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
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Abstract

The epitaxical and thermally stable NiAI/(AI, Ga)As system is shown to meet all of the basic materials criteria for buried metal/compound semiconductor heterostructures. We describe the growth of these heterostructures by molecular beam epitaxy. Even the thinnest buried NiAI films grown thus far (1.5 nm) are electrically continuous and metallic. Electron tunneling and lateral transport measurements provide strong evidence for size quantization in NiAl films thinner than 3.5 nm. The merging of compound semiconductor tunneling barriers with epitaxical metallic quantum wells and the ability to selectively contact buried metallic quantum wells is expected to yield novel three-terminal devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 571
Copyright
Copyright © Materials Research Society 1989

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References

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