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Growth and Optical Properties of GaN Grown by MBE on Novel Lattice-Matched Oxide Substrates

Published online by Cambridge University Press:  21 February 2011

J.F.H. Nicholls ,
H. Gallagher ,
B. Henderson ,
C. Trager-cowan ,
P.G. Middleton ,
K.P. O'Donnell ,
T.S. Cheng ,
C.T. Foxon  and
B.H.T. Chai
J.F.H. Nicholls
Affiliation:
Department of Physics, University of Strathclyde, Glasgow, UK.
H. Gallagher
Affiliation:
Department of Physics, University of Strathclyde, Glasgow, UK.
B. Henderson
Affiliation:
Department of Physics, University of Strathclyde, Glasgow, UK.
C. Trager-cowan
Affiliation:
Department of Physics, University of Strathclyde, Glasgow, UK.
P.G. Middleton
Affiliation:
Department of Physics, University of Strathclyde, Glasgow, UK.
K.P. O'Donnell
Affiliation:
Department of Physics, University of Strathclyde, Glasgow, UK.
T.S. Cheng
Affiliation:
Department of Physics, University of Nottingham, Nottingham, UK.
C.T. Foxon
Affiliation:
Department of Physics, University of Nottingham, Nottingham, UK.
B.H.T. Chai
Affiliation:
Centre for Optics Research, University of Central Florida, Orlando, FL, USA.
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Abstract

In this paper we demonstrate the feasibility of growing III-N semiconductors on novel lattice-matched oxide substrates. Although the growth parameters are not yet optimal, acceptable GaN layers have been grown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 535
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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