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Growth and Morphology of Pentacene Films on Oxide Surfaces

Published online by Cambridge University Press:  15 March 2011

Ricardo Ruiz
Affiliation:
Vanderbilt University, Department of Physics and Astronomy Nashville, TN 37235, U.S.A.
Leonard C. Feldman
Affiliation:
Vanderbilt University, Department of Physics and Astronomy Nashville, TN 37235, U.S.A. Solid-State Division, Oak Ridge National Laboratory Oak Ridge, TN 37831, U.S.A.
Richard F. Haglund Jr
Affiliation:
Vanderbilt University, Department of Physics and Astronomy Nashville, TN 37235, U.S.A.
Rodney A. McKee
Affiliation:
Solid-State Division, Oak Ridge National Laboratory Oak Ridge, TN 37831, U.S.A.
Norbert Koch
Affiliation:
Princeton University, Princeton Materials Institute Princeton, NJ 08542, U.S.A.
Bert A. Nickel
Affiliation:
Princeton University, Princeton Materials Institute Princeton, NJ 08542, U.S.A.
Jens Pflaum
Affiliation:
Princeton University, Princeton Materials Institute Princeton, NJ 08542, U.S.A.
Giacinto Scoles
Affiliation:
Princeton University, Princeton Materials Institute Princeton, NJ 08542, U.S.A.
Antoine Kahn
Affiliation:
Princeton University, Princeton Materials Institute Princeton, NJ 08542, U.S.A.
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Abstract

Pentacene thin films were grown in ultra high vacuum on amorphous SiO2 and on a high dielectric constant material, crystalline BaTiO3. During pentacene deposition, substrates were held at three different temperatures (-650, 250 and 750 C). In general, three different morphologies were identified: a first closed interfacial layer, a thin film mode composed of faceted grains with single molecule step height, and a volume mode with features substantially higher than those of the thin film mode. Analysis was carried out by atomic force microscopy and in some cases by synchrotron X-ray diffraction.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Dimitrakopoulos, C.D., Mascaro, D.J., IBM J.Res. & Dev. 45 (1), 11 (2001).Google Scholar
2. Lin, Y.-Y., Gundlach, D.J., Nelson, S.F., and Jackson, T.N., IEEE Electron Device Lett. 18, 12 (1997).Google Scholar
3. Bouchoms, I.P.M., Schoonveld, W.A., Vrijmoeth, J., Klapwijk, T.M., Synthetic Metals 104, 175 (1999).Google Scholar
4. Dodabalapur, A., Torsi, L., Katz, H.E., Science 268, 270 (1995).Google Scholar
5. Dimitrakopoulos, C.D., Purushothaman, S., Kymissis, J., Callegari, A., Shaw, J.M., Science 283, 822 (1999).Google Scholar
6. Dimitrakopoulos, C.D., Kymissis, Ioannis, Purushothaman, S., Neumayer, D.A., Duncombe, P.R. and Laibowitz, R.B., Advanced Materials 11, 16 (1999).Google Scholar
7. Heringdorf, Frank-J. Meyer zu, Reuter, M.C. and Tromp, R.M., Nature 412, 517 (2001).Google Scholar
8. McKee, R.A., Walker, F.J., Chisholm, M.F., Science 293, 468 (2001).Google Scholar
9. Silinsh, E.A., Organic Molecular Crystals. Their Electronic States, (Springer-Verlag, Berlin, 1980) p. 15.Google Scholar