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Growth and Luminescence Properties of III-N:Er Materials Doped During Chemical Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

J. D. Mackenzie ,
C. R. Abernathy ,
S. J. Pearton ,
U. Hömmerich ,
J. T. Seo ,
F. Ren ,
R. G. Wilson ,
Paul Chen  and
J. M. Zavada
J. D. Mackenzie
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
U. Hömmerich
Affiliation:
Department of Physics, Research Center for Optical Physics, Hampton University, Hampton, VA
J. T. Seo
Affiliation:
Department of Physics, Research Center for Optical Physics, Hampton University, Hampton, VA
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL
R. G. Wilson
Affiliation:
Consultant, Stevenson Ranch, CA;
Paul Chen
Affiliation:
U.S. Army Research Laboratory, Research Triangle Park, NC
J. M. Zavada
Affiliation:
U.S. Army Research Laboratory, Research Triangle Park, NC
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Abstract

The incorporation and optical activation of Er in III-N optically-pumped and electroluminescent structures has been studied. For the first time, strong Er3+-related photoluminescence (PL) was measured at 300K for GaN:Er doped during growth on c-plane Al2O3 and Si. Also, room temperature electroluminescence was observed for simple GaN:Er structures on Si. Experiments to evaluate the effects C and 0 on the optical activity of Er indicated that these impurities enhance Er PL and EL in GaN. GaN films doped with Er to a concentration of 3 ×1018 cm−3 with [0] ∼ 1020 cm−3 and [C] ∼1021 cm−3 luminesce at 1.54 pim with an intensity ∼2 orders of magnitude greater than films with oxygen and carbon backgrounds of less than 1019 cm−3. Implantation and activation annealing was also shown to increase Er3+ signal in p(Mg)-i(Er)-n(Si) structures where C and 0 implant profiles were made to coincide with the Er-doped layers. The thermal PL quenching behavior was also markedly different for samples of varying 0 and C content. Er3+ photoluminescence from Gan:Er/Al2O3 samples with high O and C concentrations quenched by only 10% between 15 K and 300 K while the integrated PL signal from samples with lower [O] and [C] quenched ∼85% over the same temperature range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 325
Copyright
Copyright © Materials Research Society 1998

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