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Growth and Electronic Properties of Nanocrystalline Si

Published online by Cambridge University Press:  01 February 2011

Vikram Dalal ,
Kamal Muthukrishnan ,
Satya Saripalli ,
Dan Stieler  and
Max Noack
Vikram Dalal
Affiliation:
vdalal@iastate.edu, Iowa State University, Electrical and Comp. Engr., Coover Hall, Ames, Iowa, 50014, United States, 5152941077, 5152949584
Kamal Muthukrishnan
Affiliation:
kamal2u@iastate.edu, Iowa State University, Ames, Iowa, 50011, United States
Satya Saripalli
Affiliation:
ssatya@iastate.edy, Iowa State University, Ames, Iowa, 50011, United States
Dan Stieler
Affiliation:
dstieler@iastate.edu, Iowa State University, Ames, Iowa, 50011, United States
Max Noack
Affiliation:
noackmax@iastate.edu, Iowa State University, Ames, Iowa, 50011, United States
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Abstract

Nanocrystalline Silicon is an important electronic materials for solar cells, for display devices and for sensors. In this paper, we discuss the influence of ions on the growth and properties of thenanocrystalline Si:H material. Using a unique growth geometry, combination of hot wire and ECR plasma growth, we show that low energy ion bombrdment is beneficial for growing high quality materials. Ion bombardment by H is shown to etch the films during growth and also promote crystallinity. The results on film growth are compared with simulations of growth using the SRIM program. The electronic properties measured include mobilities of both electrons and holes in device-type structures, carrier lifetimes, diffusion lengths, defect densities and capture cross-sections for holes. Electron mobility is found to increase with grain size, with a minimum mobility being in the range of 1 cm2/V-s. The hole mobility is also in this range, and three different methods of measuring it give approximately the same value. The capture cross-section for holes is of the order of 1-2 × 10-16 cm2. The lifetime of carriers is found to depend inversely on the defect density, implying that the recombination is trap controlled.

Keywords

Simicrostructureplasma-enhanced CVD (PECVD) (chemical reaction)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A13-01
Copyright
Copyright © Materials Research Society 2006

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