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Growth and Characterization of Multilayered Structure of GaAs/Epi-Si/SiO2 /Si Composite

Published online by Cambridge University Press:  28 February 2011

C.S. Yang  and
A. S. Yue
C.S. Yang
Affiliation:
Department of Materials Science &Engineering University of California, Los Angeles, CA. 90024
A. S. Yue
Affiliation:
Department of Materials Science &Engineering University of California, Los Angeles, CA. 90024
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Abstract

The monolithic integration of GaAs and Si devices is highly attractive for very high speed LSI and optoelectronic integrated circuits. To accomplish this, the epitaxial growth of GaAs films on Si substrates has been successfully realized. However, in the GaAs/Si structure, the conductive nature of the silicon substrate results in a severe transmission line loss [1,2]. To help solve this problem, we suggest to grow GaAs film on SOI (silicon on insulator) substrate for microwave device application. This GaAs/SOI structure will have low transmission line loss and excellent radiation hardness. In this paper, we present some cross-section SEM and TEM data and discuss the transmission line loss and radiation hardness of this multilayered structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 173
Copyright
Copyright © Materials Research Society 1988

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References

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