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Growth and Characterization of Highly Oxygen-Doped GaAs

Published online by Cambridge University Press:  25 February 2011

M.S. Goorsky ,
T.F. Kuech ,
P.M. Mooney ,
F. Cardone  and
R.M. Potemski
M.S. Goorsky
Affiliation:
IBM Research Division T.J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
T.F. Kuech
Affiliation:
IBM Research Division T.J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
P.M. Mooney
Affiliation:
IBM Research Division T.J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
F. Cardone
Affiliation:
IBM Research Division T.J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
R.M. Potemski
Affiliation:
IBM Research Division T.J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
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Abstract

High levels (≃ 1018cm-3) of oxygen were introduced into GaAs by using dimethyl aluminum methoxide (DMAlM0) as an oxygen-bearing precursor during metalorganic vapor phase epitaxy. Layers co-doped with oxygen and intentionally added silicon, both to concentrations of ≃ 1018 cm-3, were depleted of free carriers and had no measurable luminescence. Deep levels were present in layers grown with lower oxygen incorporation, but the compensation mechanism due to oxygen incorporation is not apparently tied to a specific defect level. The material with the electronic deep levels also possessed deep luminescence energy lines. All layers exhibited excellent surface morphology. For comparison, other layers were grown by introducing low levels of 02 and trimethyl aluminum during GaAs growth. The surface morphology of these layers was usually hazy and the layers did not exhibit the same well defined electrical and optical characteristics as the layers grown with DMAlMO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 177
Copyright
Copyright © Materials Research Society 1991

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References

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