Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-26T22:39:42.409Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of GaN Thin Films on Si(111) Substrates Using SiC Intermediate Layer

Published online by Cambridge University Press:  03 September 2012

K. Y. Lim ,
K. J. Lee ,
C. I. Park ,
K.C. Kim ,
S. C. Choi ,
W.-H. Lee ,
E.-K. Suh ,
G. M. Yang  and
K. S. Nahm
K. Y. Lim
Affiliation:
Department of Semiconductor Science & Technology, Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
K. J. Lee
Affiliation:
Department of Semiconductor Science & Technology, Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
C. I. Park
Affiliation:
Department of Semiconductor Science & Technology, Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
K.C. Kim
Affiliation:
Department of Semiconductor Science & Technology, Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
S. C. Choi
Affiliation:
Department of Semiconductor Science & Technology, Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
W.-H. Lee
Affiliation:
Department of Semiconductor Science & Technology, Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
E.-K. Suh
Affiliation:
Department of Semiconductor Science & Technology, Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
G. M. Yang
Affiliation:
Department of Semiconductor Science & Technology, Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
K. S. Nahm
Affiliation:
Department of Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
Get access

Abstract

GaN films have been grown atop Si-terminated 3C-SiC intermediate layer on Si(111) substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). The SiC intermediate layer was grown by chemical vapor deposition (CVD) using tetramethylsilane (TMS) as the single source precursor. The Si terminated SiC surface was obtained by immediately flow of SiH4 gas after growth of SiC film. LP-MOCVD growth of GaN on 3C-SiC/Si(111) was carried out with trimethylgallium (TMG) and NH3. Single crystalline hexagonal GaN layers can be grown on Si terminated SiC intermediate layer using an AlN or GaN buffer layer. Compared with GaN layers grown using a GaN buffer layer, the crystal qualities of GaN films with AlN buffer layers are extremely improved. The GaN films were characterized by x-ray diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM). Full width at half maximum (FWHM) of double crystal x-ray diffraction (DCXD) rocking curve for GaN (0002) on 3C-SiC/Si(111) was 890 arcsec. PL near band edge emission peak position and FWHM at room temperature are 3.38 eV and 79.35 meV, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.24
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M. and Chocho, K., Jpn. J. Appl. Phys. 37, L1020 (1998)Google Scholar
[2] Nakamura, S., Senoh, M., Nagahama, S., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M. and Mukai, T., Jpn. J. Appl. Phys. 38, L226 (1999)Google Scholar
[3] Steckl, A. J., Devrajan, J., Tran, C. and Stall, R. A., Appl. Phys. Lett. 69, 2264 (1996)Google Scholar
[4] Steckl, A. J., Devrajan, J., Tran, C. and Stall, R. A., J. Electron. Mater. 26, 217 (1997)Google Scholar
[5] Strittmatter, A., Krost, A., burg, M. Stra, Turck, V., Bimberg, D., Blasing, J. and Shristen, J., Appl. Phys. Lett. 74, 1242 (1999)Google Scholar
[6] Steckl, A. J., Yuan, C., Tong, Q-Y., Gosele, U. and Loboda, M. J., J. Electrochem. Soc. 141, L66 (1994)Google Scholar
[7] Wahab, Q., Glass, R. C., Ivanov, I. P., Bircj, J., Sundgren, J.-E. and Willander, M., J. Appl. Phys. 74, 1663 (1993)Google Scholar