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Growth and Characterization of GaAs on Si by Mbe

Published online by Cambridge University Press:  28 February 2011

A.Z. Li ,
J.X. Wang ,
J.H. Qiu ,
B.W. Liang ,
Y.L. Zheng  and
S.B. Wang
A.Z. Li
Affiliation:
Department of Semiconductor Materials Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
J.X. Wang
Affiliation:
Department of Semiconductor Materials Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
J.H. Qiu
Affiliation:
Department of Semiconductor Materials Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
B.W. Liang
Affiliation:
Department of Semiconductor Materials Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Y.L. Zheng
Affiliation:
Department of Semiconductor Materials Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
S.B. Wang
Affiliation:
Department of Semiconductor Materials Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
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Abstract

High quality of Si-doped n-type MBE GaAs grown directly on 4° off (001) towards [0111 Si substrates has been achieved by a multiple step MBE growth procedure. Epilayers have been characterized for the doping range 2x1016 to 3x1018cm-3 with thickness up to lOm by double crystal x-ray rocking curves, Hall mobilities, photoluminescence spectra, dislocation etching pit densities and I-V characteristics of MESFET of GaAs/Si. The results show that the electron mobilities are 2900 to 1430cm2 /Vs while free electron concentration of 3.5x1017 to 2.7x1018cm-3. The FWHM of the DCRC are 175 to 350 arc sec, the EPD are 1x106 to 2x107 cm-2 for most of samples and both of them appear variation with thickness of epilayer. The main peak of PL appears a few meV shift to long wavelength in comparison with GaAs on GaAs. The FWHM of the PL are 21 meV for n-type GaAs/Si in a doping level of 3.5x1017cm-3. MESFET show a acceptable I-V characteristics. All of epilayers with thickness less than 5pm appear good morphology. Some slightly orthogonal cracking was observed in the 5 to 10µm thick films of GaAs/Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 305
Copyright
Copyright © Materials Research Society 1989

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References

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