Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-17T14:17:14.380Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of AllnGaN/InGaN Heterostructures

Published online by Cambridge University Press:  15 February 2011

J. C. Roberts ,
F. G. Mcintosh ,
M. Aumer ,
V. Joshkin ,
K. S. Boutros ,
E. L. Piner ,
Y. W. He ,
N. A. El-Masry  and
S. M. Bedair
J. C. Roberts
Affiliation:
ECE Dept., North Carolina State University, Raleigh, North Carolina 27695-7911.
F. G. Mcintosh
Affiliation:
ECE Dept., North Carolina State University, Raleigh, North Carolina 27695-7911.
M. Aumer
Affiliation:
ECE Dept., North Carolina State University, Raleigh, North Carolina 27695-7911.
V. Joshkin
Affiliation:
ECE Dept., North Carolina State University, Raleigh, North Carolina 27695-7911.
K. S. Boutros
Affiliation:
ECE Dept., North Carolina State University, Raleigh, North Carolina 27695-7911.
E. L. Piner
Affiliation:
MSE Dept., North Carolina State University, Raleigh, North Carolina 27695-7916
Y. W. He
Affiliation:
MSE Dept., North Carolina State University, Raleigh, North Carolina 27695-7916
N. A. El-Masry
Affiliation:
MSE Dept., North Carolina State University, Raleigh, North Carolina 27695-7916
S. M. Bedair
Affiliation:
ECE Dept., North Carolina State University, Raleigh, North Carolina 27695-7911.
Get access

Abstract

The emission wavelength of the InxGa1−xN ternary system can span from the near ultraviolet through red regions of the visible spectrum. High quality double heterostructures with these InxGa1−xN active layers are essential in the development of efficient optoelectronic devices such as high performance light emitting diodes and laser diodes. We will report on the MOCVD growth and characterization of thick and thin InGaN films. Thick InxGa1−xN films with values of x up to 0.40 have been deposited and their photoluminescence (PL) spectra measured. AlGaN/InGaN/AlGaN double heterostructures (DHs) have been grown that exhibit PL emission in the violet, blue, green and yellow spectral regions, depending on the growth conditions of the thin InGaN active layer. Preliminary results of an AllnGaN/InGaN/AllnGaN DH, with the potential of realizing a near-lattice matched structure, will also be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 341
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., Senoh, M., Iwasa, N. and Nagahama, S., Jpn. J. Appl. Phys. 34, L797 (1995).Google Scholar
2. Roberts, J. C., McIntosh, F. G., Boutros, K. S., Bedair, S. M., Moussa, M., Piner, E. L., He, Y. and El-Masry, N. A., presented at MRS 1995 Fall Meeting and to be published in MRS proceedings.Google Scholar
3. Boutros, K. S., McIntosh, F. G., Roberts, J. C., Bedair, S. M., Piner, E. L. and El-Masry, N. A., Appl. Phys. Lett. 67, 1856 (1995).Google Scholar
4. McIntosh, F. G., Boutros, K. S., Roberts, J. C., Bedair, S. M., Piner, E. L. and El-Masry, N. A., Appl. Phys. Lett. 68, 40 (1996).Google Scholar
5. Piner, E. L., et. al., presented at MRS 1995 Fall Meeting and to be published in the MRS proceedings.Google Scholar
6. Nakamura, S., Mukai, T., Jpn. J. Appl. Phys. 31, 1457 (1992).Google Scholar
7. Osamura, K., Naka, S. and Murakami, Y., J. Appl. Phys. 46, 3432 (1975).Google Scholar
8. Nakamura, S., Microelectron. J. 25, 651 (1994).Google Scholar