Hostname: page-component-84b7d79bbc-g78kv Total loading time: 0 Render date: 2024-07-29T09:42:39.230Z Has data issue: false hasContentIssue false

Group III Metal Clusters on (001) III-V Compound Semiconductors

Published online by Cambridge University Press:  15 February 2011

S. Puddephatt
Affiliation:
The University of Western Ontario, Department of Physics, London, Ontario, Canada, N6A 3K7
T.D. Lowes
Affiliation:
The University of Western Ontario, Department of Physics, London, Ontario, Canada, N6A 3K7
Get access

Abstract

The interaction of group III Metal clusters with the underlying III-V compound semiconductor substrate is examined. Specifically, both In and Ga on InP and GaAs (001) are discussed. Two Methods of obtaining an excess concentration of the group III Metal are treated: thermal decomposition in UHV where preferential group V dissociation and vaporization leaves a supersaturation of metal and Knudsen cell deposition in an MBE system. It is shown that the resulting morphologies for all cases are attributable to significant cluster/substrate interactions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zinke-Allmang, M., Feldman, L.C. and van Saarloos, W., Phys. Rev. Lett. 68, 2358 (1992).Google Scholar
2. Lowes, T.D. and Zinke-Allmang, M., J. Appl. Phys., 73, 4937 (1993).Google Scholar
3. Lowes, T.D. and Zinke-Allmang, M., Mater. Res. Soc. Symp. Proc. 280 (1993).Google Scholar
4. Farrow, R.F.C., J. Phys. D 7, 2436 (1974).Google Scholar
5. Lowes, T.D. and Zinke-Allmang, M., submitted 1993.Google Scholar
6. Hirth, J.P, J. Cryst. Growth, 17, 63 (1979);Google Scholar
Ruckenstein, E. and Dadyburjor, D.B., Thin Solid Films, 55, 89 (1978).Google Scholar