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Grain Boundary States in Float-Zone-Si-Bicrystals

Published online by Cambridge University Press:  22 February 2011

G. Petermann  and
P. Haasen
G. Petermann
Affiliation:
Institut f. Metallphysik, Universität Göttingen, and SFB 126, Hospitalstr. 3-5, D-3400 Göttingen, F. R. Germany
P. Haasen
Affiliation:
Institut f. Metallphysik, Universität Göttingen, and SFB 126, Hospitalstr. 3-5, D-3400 Göttingen, F. R. Germany
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Abstract

A near Σ25 grain boundary has been studied electrically in FZ-silicon at various degrees of n-doping. The boundary is electrically active without previous heat treatment. A unique density-of-states can be derived from dc and ac measurements at all dopings and temperatures investigated. The model of the charged g.b. includes potential fluctuations in the g.b. plane. Admittance spectroscopy allows to differentiate between g.b. states and deep centers its the compensating space charge zone.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 65
Copyright
Copyright © Materials Research Society 1988

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References

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