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Glow Discharge Produce Amorphous Sic:H Thin Films

Published online by Cambridge University Press:  28 February 2011

N. T. Tran ,
D. J. Olsen ,
R. I. Patel  and
K. A. Epstein
N. T. Tran
Affiliation:
Electronic and Information Sector Laboratories, 3M Company, St. Paul, MN 55144
D. J. Olsen
Affiliation:
Electronic and Information Sector Laboratories, 3M Company, St. Paul, MN 55144
R. I. Patel
Affiliation:
Electronic and Information Sector Laboratories, 3M Company, St. Paul, MN 55144
K. A. Epstein
Affiliation:
Electronic and Information Sector Laboratories, 3M Company, St. Paul, MN 55144
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Abstract

Amorphous hydrogenated silicon carbide alloy films (a-SiC:H) were produced by the decomposition of methane and silane in a glow discharge deposition system. A deposition rate of 13 Å/sec was achieved for good quality films. Amorphous SiC:H films of p+ type and n+ type of a band gap of 1.86 eV and 1.8 eV and the activation energy of 0.4 eV and 0.23 eV, respectively were obtained. Results show that p+ type and n+ type a-SiC:H films can be good window layers and good diffusion barriers for indium in polyimide/metal/n-i-p(p-i-n)/ITO amorphous silicon solar cells.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 325
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Tawada, Y., Okamoto, H. and Hamakawa, Y., Appl. Phys. Lett. 39, 237 (1981).CrossRefGoogle Scholar
2. Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H., and Hamakawa, Y., J. Appl. Phys. 53, 5273 (1982).CrossRefGoogle Scholar
3. Nakano, S., Kawada, H., Matsuoka, T., Kiyama, S., Sakai, S., Murata, K., Shibuya, H., Kishi, Y., Nagaoka, I., and Kuwano, Y., Technical Digest of the International PVSEC-l, Kobe, November 1984, Japan, 583.Google Scholar
4. Sakai, H., Maruyama, K., Yoshida, T., Ichikawa, Y., Hama, T., Ueno, M., Kamiyama, M. and Uchida, Y., ref. 3, 591.Google Scholar
5. Anderson, D.A. and Spear, W.E., Phil. Mag. 35, 1 (1977).CrossRefGoogle Scholar
6. Catherine, Y., Turban, G., and Grolleau, B., Thin Solid Films 23, 765 (1981), also Y. Catherine, Ph.D. Thesis, Luniversité de Nantes,-1981.Google Scholar
7. Tawada, Y., Tsuge, K., Nishimura, K., Kondo, M., Okamoto, H. and Hamakawa, Y., Proc. 3rd Photovoltaic Science and Engineering Conference in Japan, 1982, Japan. J. Appl. Phys. 21 (1982), supplement 21–22, 291.CrossRefGoogle Scholar
8. Patel, R.I., Shirck, J., Olsen, D.J., Tran, N.T., Epstein, K.A., Proc. 18th IEEE Photovoltaic Specialists' Conference, Las Vegas, Nevada, October, 1985.Google Scholar
9. Swanepoel, R., J. Phys. E16, 1219 (1983).Google Scholar
10. Patel, R.I., Material Research Society Proceedings, 49, 1 (1985).CrossRefGoogle Scholar