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GexSil-x Layers Grown by Rapid Thermal Processing Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

K. H. Jung ,
Y. M. Kim ,
H. G. Chun ,
D. L. Kwong  and
L. Rabenberg
K. H. Jung
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
Y. M. Kim
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
H. G. Chun
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
L. Rabenberg
Affiliation:
Center for Materials Science and Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

Rapid thermal processing chemical vapor deposition was used to grow single and multilaye repitaxial GexSil-x/Si structures on (100)Si substrates using GeH4 and SiH2Cl2 at 900°C and 1000°C with SiH2Cl2:GeH4 ratios of 14:1 to 95:1 at 5 Torr. Misfit dislocation free layers with few threading dislocations were grown for Ge concentrations of up to 13%. Misfit dislocation networks aligned along <110> were formed at the interface of films with higher Ge concentrations. Dislocation loops were also found at the interface. GexSil-x layers grown at 1000°C were highly crystalline, but relaxed. In multi-layer structures, AES depth profiles showed Ge pile-up at the GexSi1-x/Si interface of layers with higher Ge concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 115
Copyright
Copyright © Materials Research Society 1989

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References

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