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GexSi1−x Waveguides Grown by Rapid Thermal Processing Chemical Vator Deposition

Published online by Cambridge University Press:  22 February 2011

K. H. Jung ,
R. A. Mayer ,
T. Y. Hsieh ,
J. C. Campbell  and
D. L. Kwong
K. H. Jung
Affiliation:
The University of Texas at Austin, Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712
R. A. Mayer
Affiliation:
The University of Texas at Austin, Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712
T. Y. Hsieh
Affiliation:
The University of Texas at Austin, Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712
J. C. Campbell
Affiliation:
The University of Texas at Austin, Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712
D. L. Kwong
Affiliation:
The University of Texas at Austin, Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712
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Abstract

We report the growth and characterization of GexSi1−x films for optical waveguiding. GexSi1−x/Si waveguides were grown by rapid thermal processing chemical vapor deposition. An average attenuation of 3.3 dB/cm was achieved for a 1 μm thick Ge0.04Si0.96 layer patterned into rib waveguides 2000 Å deep with widths of 5 μm. Directional couplers were also fabricated. Average coupling efficiencies of 85% were achieved for 1.5 μm interwaveguide separation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 347
Copyright
Copyright © Materials Research Society 1991

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References

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