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Gettering In Silicon

Published online by Cambridge University Press:  28 February 2011

T. F. Seidel
T. F. Seidel*
Affiliation:
Diamond Cubic Corporation 4039 Avenida de la Plata Oceanside, CA 92054
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Abstract

This paper reviews the basis for phenomenological path for gettering: release, diffusionand capture in the context of old and new developments. More recent precipitation studies in silicon are now recognized to involve complex interactive effects. Controlled precipitation requires knowledge of and control of not only oxygen but carbon, native defects(related to crystal thermal history and/or process history), high doping, microfluctuations and interactions between “extrinsic” and “intrinsic” gettering.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 3
Copyright
Copyright © Materials Research Society 1986

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