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Ge-Quantum Dots on SI(001) Tailored by Carbon Predeposition

Published online by Cambridge University Press:  10 February 2011

O. Leifeld ,
D. Grützmacher ,
B. Müller  and
K. Kern
O. Leifeld
Affiliation:
Micro- and Nanostructures Laboratory, Paul-Scherrer-Institute, CH-5232 Villigen-PSI Institut de Physique Expérimentale, EPFL, CH-1015 Lausanne, Switzerland
D. Grützmacher
Affiliation:
Micro- and Nanostructures Laboratory, Paul-Scherrer-Institute, CH-5232 Villigen-PSI
B. Müller
Affiliation:
Institute of Quantum Electronics, Nonlinear Optics Laboratory, ETHZ, CH-8093 Zürich, Switzerland
K. Kern
Affiliation:
Institut de Physique Expérimentale, EPFL, CH-1015 Lausanne, Switzerland
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Abstract

The morphology of Si(001) after carbon deposition of 0.05 to 0.11 monolayers (ML) was investigated in situ by ultrahigh vacuum scanning tunneling microscopy (UHV-STM). The carbon induces a c(4×4)-reconstruction of the surface. In addition, carbon increases the surface roughness compared to clean Si(001) (2×1). In a second step, the influence of the carbon induced restructuring on Ge-island nucleation was investigated. The 3D-growth sets in at considerably lower Ge coverage compared to the clean Si(001) (2×1) surface. This leads to a high density of small though irregularly shaped dots, consisting of stepped terraces, already at 2.5 ML Ge. Increasing the Ge-coverage beyond the critical thickness for facet formation, the dots show { 105 }- facets well known from Ge-clusters on bare Si(001) (2×1). However, they are flat on top with a (001)-facet showing the typical buckled Ge rows and missing dimers. This indicates that the compressive strain is not fully relaxed in these hut clusters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 183
Copyright
Copyright © Materials Research Society 1998

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