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Generalized Activation Energy Spectrum Theory: A New Approach for modeling Structural Relaxation in Amorphous Solids

Published online by Cambridge University Press:  15 February 2011

Jung H. Shin  and
Harry A. Atwater
Jung H. Shin
Affiliation:
Thomas Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena CA 91125
Harry A. Atwater
Affiliation:
Thomas Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena CA 91125
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Abstract

A general approach to the dynamics of structural relaxation in amorphous solids is developed. A form of the recombination kinetics of defects is chosen which removes the ad hoc assumption made in previous theories that defects recombine only with others of identical activation energy. The generalized theory is tested quantitatively by modelling the structural relaxation of amorphous silicon, and comparing the results with the experimental data on structural relaxation. It is found that the generalized theory is necessary in order to accurately describe the time-resolved relaxation data. The generalized theory is also applied to estimate the effect of irradiation on the nucleation kinetics of crystal silicon, and is found to agree well with experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 167
Copyright
Copyright © Materials Research Society 1994

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References

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