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Gas Phase Adduct Reactions in MOCVD Growth of GaN

Published online by Cambridge University Press:  21 February 2011

A. Thon  and
T.F. Kuech
A. Thon
Affiliation:
Department of Chemical Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI53706, thon@quiche.che.wisc.edu
T.F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI53706, thon@quiche.che.wisc.edu
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Abstract

Gas phase reactions between trimethylgallium (TMG) and ammonia were studied at high temperatures, characteristic to MOCVD of GaN reactors, by means of insitu mass spectroscopy in a flow tube reactor. It is shown, that a very fast adduct formation followed by elimination of methane occurs. The decomposition of TMG and the adduct - derived compounds are both first order and have similar apparent activation energy. The pre-exponential factor of the adduct decomposition is smaller, and hence is responsible for the higher full decomposition temperature of the adduct relative to that of TMG.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 97
Copyright
Copyright © Materials Research Society 1996

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References

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