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Gan Growth By Nitrogen Ecr-Cvd Method

Published online by Cambridge University Press:  15 February 2011

K. H. Chen ,
C. H. Chao ,
T. J. Chuang ,
Y. J. Yang ,
L. C. Chen ,
C. K. Chen ,
Y. F. Huang ,
C. H. Yang ,
H. Y. Lin  and
I. M. Chang
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K. H. Chen
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan.
C. H. Chao
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan.
T. J. Chuang
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan.
Y. J. Yang
Affiliation:
Department of Electrical Engineering, National Taiwan University, Taiwan.
L. C. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taiwan.
C. K. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taiwan.
Y. F. Huang
Affiliation:
Department of Physics, Fu-Jen University, Taiwan.
C. H. Yang
Affiliation:
Department of Physics, Fu-Jen University, Taiwan.
H. Y. Lin
Affiliation:
Tar-Tong Institute of Technology, Taipei, Taiwan
I. M. Chang
Affiliation:
Department of Physics, National Taiwan University, Taiwan.
Y. F. Chen
Affiliation:
Department of Physics, National Taiwan University, Taiwan.
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Abstract

A new approach toward GaN growth using electron cyclotron resonance assisted microwave plasma enhanced chemical vapor deposition (ECR-CVD) method has been implemented. This growth technique allows for low- as well as high-temperature deposition, the use of pure nitrogen source, and a wide operating pressure that is between MOCVD and MOMBE. The unique features of this technique enable the growth of the epitaxial layer of GaN on a variety of substrates including sapphire, silicon, and LiGaO2. SEM, XRD, Raman, photoluminescence (PL), and Hall measurement are employed to characterize the deposited films. Highly oriented, (0001) textured films in the expected wurtzite structure with blue emission have been obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 377
Copyright
Copyright © Materials Research Society 1996

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