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GaAs Surface Stabilization by Vacuum Anneal with SiO

Published online by Cambridge University Press:  22 February 2011

G. J. Gerardi ,
F. C. Rong ,
E. H. Poindexter ,
M. Harmatz ,
H. Shen  and
W. L. Warren
G. J. Gerardi
Affiliation:
William Paterson College of New Jersey, Wayne, N J 07470
F. C. Rong
Affiliation:
William Paterson College of New Jersey, Wayne, N J 07470
E. H. Poindexter
Affiliation:
William Paterson College of New Jersey, Wayne, N J 07470
M. Harmatz
Affiliation:
William Paterson College of New Jersey, Wayne, N J 07470
H. Shen
Affiliation:
U.S. Army ETDL, Fort Monmouth, N J 07703
W. L. Warren
Affiliation:
Sandia National Laboratories, Albuquerque, N M 87185
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Abstract

We find a significant alteration of the surface properties of SI- GaAs as a result of a thermal treatment with SiO under vacuum. Low temperature photoluminescence measurements reveal a tenfold increase in emissions attributed to free or donor bound excitons and the exciton bound to a silicon acceptor. A paramagnetic center is also generated as a result of this treatment. The EPR signal has a g-value of 2.0017 and a linewidth of 0.1 mT. The enhanced photoluminescence and the EPR signal are both quenched by a short exposure to hydrogen plasma at room temperature. Chemical and spectroscopic evidence indicates that the resonance is due to a silicon related center near the GaAs surface. The surface stabilization is attributed to a reaction or incorporation of SiO with the arsenic depleted GaAs surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 601
Copyright
Copyright © Materials Research Society 1993

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References

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