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GaAs and Si Assisted Etching using a Scanning Tunneling Microscope

Published online by Cambridge University Press:  25 February 2011

Masakazu Baba  and
Shinji Matsui
Masakazu Baba
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki, Japan
Shinji Matsui
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki, Japan
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Abstract

GaAs etching with Cl2 gas is studied with a scanning tunneling microscope (STM). Both Cl2 gas and tunnel electron assist etching occur under the tip during scanning and the etching profile is found to depend on the gas flow time. GaAs and Si patterns with nanometer dimensions are fabricated by STM assist etching with a very low voltage (-IV). Also atomic layer etching of GaAs is demonstrated by STM assist-etching using a Cl adlayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 159
Copyright
Copyright © Materials Research Society 1992

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References

[1] McCord, M. A. and Pease, R. F. W., Appl.Phys.Lett. 50, 569 (1987)Google Scholar
[2] Mamrian, C. R. K. and Colton, R. J., Appl.Phys.Lett. 5L,755 (1990)CrossRefGoogle Scholar
[3] McCord, M. A. and Awschalom, D. D., Appl.Phys.Lett. 57, 2153 (1990)CrossRefGoogle Scholar
[4] Jahanmir, J., West, P. E. and Colter, P. C., J.Appl.Phys. 62, 7144 (1990)Google Scholar
[5] Eigler, D. M. and Schweizer, E. K., Nature 344, 524 (1990)Google Scholar
[6] Matsui, S., Ichihashi, T., Baba, M. and Satoh, A., Supperlatt. Microstruct. 7, 295 (1990)Google Scholar
[7] Baba, M. and Matsui, S., Jpn.J.Appl.Phys. 29, 2854 (1990)Google Scholar
[8] Ehrichs, E. E. and Lozanne, A. L. de, J.Vac.Sci.Technol. A8, 571 (1990)CrossRefGoogle Scholar