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Fully Atomistic Analysis of Diffuse X-Ray Scattering Spectra of Silicon Defects

Published online by Cambridge University Press:  15 February 2011

K. Nordlund
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, IL 61801, USA
P. Partyka
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, IL 61801, USA
R. S. Averback
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, IL 61801, USA
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Abstract

Diffuse X-ray scattering is a useful method for studying defects in silicon and metals. Although the traditional approaches of analyzing experimental diffuse X-ray scattering data have given much information about the size of defects and defect clusters, they are not very well suited for determining the atomic configuration. We present a fully atomistic computational method to calculate the diffuse X-ray scattering line profile of an arbitrary atomic configuration, and compare line profiles of point defects and Frenkel pair configurations with experiment.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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