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Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs

Published online by Cambridge University Press:  03 September 2012

Maziar Farahmand  and
Kevin F. Brennan
Maziar Farahmand
Affiliation:
School of Electrical and Computer Engineering 777 Atlantic Dr. Georgia Tech Atlanta, GA 30332-0250, U.S.A.
Kevin F. Brennan
Affiliation:
School of Electrical and Computer Engineering 777 Atlantic Dr. Georgia Tech Atlanta, GA 30332-0250, U.S.A.
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Abstract

The output characteristics, cutoff frequency, breakdown voltage and the transconductance of wurtzite and zincblende phase GaN MESFETs have been calculated using a self-consistent, full band Monte Carlo simulation. It is found that the calculated breakdown voltage for the wurtzite device is considerably higher than that calculated for a comparable GaN zincblende phase device. The zincblende device is calculated to have a higher transconductance and cutoff frequency than the wurtzite device. The higher breakdown voltage of the wurtzite phase device is attributed to the higher density of electronic states for this phase compared to the zincblende phase. The higher cutoff frequency and transconductance of the zincblende phase GaN device is attributed to more appreciable electron velocity overshoot for this phase compared to that for the wurtzite phase. The maximum cutoff frequency and transconductance of a 0.1 μm gate-length zincblende GaN MESFET are calculated to be 220GHz and 210 mS/mm, respectively. The corresponding quantities for the wurtzite GaN device are calculated to be 160GHz and 158 mS/mm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.13
Copyright
Copyright © Materials Research Society 1999

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