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From Point Defects to Amorphous Structures: Atomic Resolution Studies of Semiconductor Surfaces by Scanning Tunneling Microscopy (STM)

Published online by Cambridge University Press:  21 February 2011

R. Wiesendanger ,
G. Tarrach ,
D. Buergler ,
L. Scandella  and
H.-J. Guentherodt
R. Wiesendanger
Affiliation:
University of Basel, Dept. of Physics, CH-4056 Basel, Switzerland
G. Tarrach
Affiliation:
University of Basel, Dept. of Physics, CH-4056 Basel, Switzerland
D. Buergler
Affiliation:
University of Basel, Dept. of Physics, CH-4056 Basel, Switzerland
L. Scandella
Affiliation:
University of Basel, Dept. of Physics, CH-4056 Basel, Switzerland
H.-J. Guentherodt
Affiliation:
University of Basel, Dept. of Physics, CH-4056 Basel, Switzerland
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Abstract

We have studied point defects, linear defects as well as spatial transitions between ordered and disordered structures on silicon surfaces with atomic resolution by using scanning tunneling microscopy (STM). Point defects in the vicinity of multiple step edges as well as surface reconstructions at multiple step edges as high as 3 nm have been characterized by STM. STM images of partially disordered silicon surfaces prepared by laser and thermal annealing demonstrate the potential of STM for characterizing non-periodic surfaces on the atomic scale.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 237
Copyright
Copyright © Materials Research Society 1990

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References

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