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Fracture Property Improvements of a Nanoporous Thin Film Via Post Deposition Bond Modifications

Published online by Cambridge University Press:  01 February 2011

Jeannette M. Jacques ,
Ting Y. Tsui ,
Andrew J. McKerrow  and
Robert Kraft
Jeannette M. Jacques
Affiliation:
Silicon Technology Development, Texas Instruments Inc., Dallas, Texas 75243
Ting Y. Tsui
Affiliation:
Silicon Technology Development, Texas Instruments Inc., Dallas, Texas 75243
Andrew J. McKerrow
Affiliation:
Silicon Technology Development, Texas Instruments Inc., Dallas, Texas 75243
Robert Kraft
Affiliation:
Silicon Technology Development, Texas Instruments Inc., Dallas, Texas 75243
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Abstract

For 90 nm node devices, the group of materials known as organosilicate glass (OSG) has emerged as the predominant choice for intermetal dielectrics. A potential failure mechanism for this class of low-k dielectric films during the manufacturing process is catastrophic fracture due to channel cracking. The use of an electron beam curing process is being investigated for improvement in the mechanical strength of these silicon-based materials. Within this work, the effects of curing dose (micro-C/cm2) upon the mechanical properties of OSG thin films were characterized. For a set process voltage and current, linear relationships exist between the dose and several mechanical film properties. Channel crack growth velocities were also measured for these cured materials. As the cure dose is increased, the crack growth rate decreases according to a power law relationship. The structural film changes induced by the electron beam cure process are addressed, focusing on their impact upon the mechanical strength of OSG thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B3.8
Copyright
Copyright © Materials Research Society 2005

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