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Fracture Mechanical Evaluation of GaAs Wafers

Published online by Cambridge University Press:  11 February 2011

M. Schaper
Affiliation:
Dresden University of Technology, Institute of Materials Science, D-01062 Dresden, Germany
M. Jurisch
Affiliation:
Freiberger Compound Materials GmbH, D-09599 Freiberg, Germany
F. Bergner
Affiliation:
Dresden University of Technology, Institute of Materials Science, D-01062 Dresden, Germany
R. Hammer
Affiliation:
Freiberger Compound Materials GmbH, D-09599 Freiberg, Germany
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Abstract

Strength and fracture toughness of (100) oriented GaAs wafers are analyzed by fracture and indentation testing. Using finite element method (FEM) critical fracture stresses are calculated from the fracture loads of wafers tested under biaxial bending, whereas atomic force (AFM), scanning electron microscopy (SEM) and acoustic C-scan microscopy of deformation and cracking patterns around micro- and nano-indentations provided information on yielding, crack initiation and crack growth resistance. Through fracture mechanical evaluation of these results critical defect sizes are derived, which are tolerable without strength degradation. It is shown, that a fracture strength of at least 800MPa can be achieved by careful fabrication even of 6' wafers. This figure is much higher then the prescribed minimum strength level estimated to avoid premature failures during wafer handling and processing routes.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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