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Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping

Published online by Cambridge University Press:  24 May 2011

K. Sawano ,
Y. Hoshi ,
K. Kasahara ,
K. Yamane ,
K. Hamaya ,
M. Miyao  and
Y. Shiraki
K. Sawano
Affiliation:
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
Y. Hoshi
Affiliation:
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
K. Kasahara
Affiliation:
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
K. Yamane
Affiliation:
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
K. Hamaya
Affiliation:
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
M. Miyao
Affiliation:
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
Y. Shiraki
Affiliation:
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
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Abstract

We demonstrate low-resistivity Ohmic contacts for n-Ge with ultra-shallow junction. Using the impurity δ-doping techniques with Ge homoepitaxy on Ge(111) below 400 ºC, we can achieve a very abrupt doping profile within a nanometer-scale width. By introducing the δ-doping to atomically controlled metal/Ge contacts, the current-voltage characteristics clearly show Ohmic conductions owing to the effective tunneling through the Schottky barrier. This approach is promising for a formation technology of ultra-shallow source/drain contacts for scaled Ge devices.

Keywords

GeSbdopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Group IV Semiconductor Nanostructures and Applications , 2011 , mrsf10-1305-aa17-30
Copyright
Copyright © Materials Research Society 2011

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References

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