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Formation of Ultra Smooth Bi-Based Ferroelectric Films and their size effect on Dielectric Constant

Published online by Cambridge University Press:  10 February 2011

H. Tabata ,
T. Yanagita ,
M. Hamada  and
T. Kawai
H. Tabata
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan. tabata@sanken.osaka-u.ac.jp
T. Yanagita
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan. tabata@sanken.osaka-u.ac.jp
M. Hamada
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan. tabata@sanken.osaka-u.ac.jp
T. Kawai
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan. tabata@sanken.osaka-u.ac.jp
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Abstact

We have formed Bi-based ferroelectric films, such as Bi2WO6, Bi2VO5.5(n=1), Bi2SrTa2O9, Bi3TiNbO9(n=2) and Bi4Ti3O12(n=3) using a pulsed laser deposition technique. Especially, the Bi2VO5.5 film shows an atomically smooth surface with a flat 2000-3000Å wide terrace and steps of 8 Å and 16Å which correspond to a half and one unit cell, respectively. The dielectric constant, remanent polarization and coercive field of the Bi2VO5.5 thin films formed on Nb-SrTiO3(100) are 8, 3.0 μ C/cm2 and 16.0 kV/cm, respectively. The Bi2VO5.5 film formed on SiO2/Si(100) shows memory windows of 0.35V against a±2V gate bias during C-V measurements‥

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 105
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Vijay, Dilip P., Desu, Seshu B, Nagata, Masaya, Zang, Xubai, and Chen, Tze C., Mat. Res. Soc. Symp. Proc., 361 (1995) 3 Google Scholar
2. Scott, J.F. and Paz de Araujo, C.A., Science, 246 (1989) 1400 Google Scholar
3. Choopun, S., Matsumoto, T., and Kawai, T., Appl. Phys. Lett., 67 (1995) 1072 Google Scholar
4. Mihara, T., Watanabe, H., Araujo, C.A., Scott, M. Proc. 4th. Int. Symp. Integrated Ferroelectrics, Monterey, 137 (1992)Google Scholar
5. Prasad, K.V.R., Varma, K.B.R., Raju, A.R., Satyalakshimi, K.M., Mallya, R.M., and Hegde, M.S., Appl. Phys. Lett., 63 (1993) 1898 Google Scholar
6. Prasad, K.V.R., Raju, A.R., Varma, K.B.R., J. Mater. Sci., 29 (1994) 2691 Google Scholar
7. Matijasevic, V.C., Ilge, B., Stauble-Pumpin, B.., Phys. Rev. Lett. 76, (1996)4765 Google Scholar
8. Watanabe, H., Mihara, T., Yoshimori, H., and Araujo, C.A., Jpn.J. Appl. Phys., 34 5240Google Scholar
9. Cummins, S.E. and Cross, L.E., J. Appl. Phys., 34 (1968) 2268 Google Scholar
10. Tabata, H., Hamada, M., Kawai, T., Jpn.J. Appl. Phys., 34 (1995) 5146–5149 Google Scholar
11. Tabata, H., Hamada, M., Kawai, T., Mat. Res. Soc. Symp. Proc. 401 (1996) 73–84.Google Scholar
12. Hamada, M., Tabata, H. and Kawai, T., Thin Solid Films 306 (1997) 6–9.Google Scholar
13. Yanagita, T., Tabata, H. and Kawai, T., Jpn.J. Appl. Phys. 36 (1997) 5917–5920.Google Scholar
14. Tabata, H. and Kawai, T., IEICE Transactions on Electronics, may issue on April 1998.Google Scholar
15. Zhong, W.L., Wang, Y.G., Zhang, P.L. and Qu, B.D., Phys. Rev. B 50 (1994) 698 Google Scholar
16. Wang, Y.G., Zhong, W.L. and Zhang, P.L.. Rev. B 53 (1996) 11439.Google Scholar