Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-16T10:22:52.361Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of TiO2 Thin Films by Oxidation of TiN

Published online by Cambridge University Press:  22 February 2011

J. K. Truman ,
P. H. Ballentine ,
E. Terzioglu  and
A. M. Kadin
J. K. Truman
Affiliation:
CVC Products, Inc., 525 Lee Road, Rochester, NY 14603
P. H. Ballentine
Affiliation:
CVC Products, Inc., 525 Lee Road, Rochester, NY 14603
E. Terzioglu
Affiliation:
University of Rochester, Dept. of Electrical Engineering, Rochester, NY 14627
A. M. Kadin
Affiliation:
University of Rochester, Dept. of Electrical Engineering, Rochester, NY 14627
Get access

Abstract

TiN thin films were deposited by reactive sputtering onto Si substrates. TiO2 films were formed by subsequent oxidation of the TiN films, using either conventional furnace heating or rapid thermalprocessing (RTP). The materials properties of the resulting films were characterized by x-ray diffraction and Rutherford backscattering, and indicate conversion of the TiN to fully-oxidized rutile TiO2 by a diffusion-limited process. Electrical measurements of the insulating properties of the TiO2 films indicated a relative dielectric constant greater than 100, although the leakage current was greater than optimum. A fully in-situ process for the fabrication of microcapacitors is proposed, which involves the sputter deposition of TiN, the formation of TiO2 by RTP, and the deposition of a top TiN counterelectrode. This can be carried out under conditions that are compatible with Si microelectronic device processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 637
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Parker, L.H. and Tasch, A.F., “Ferroelectric Materials for 64 Mb and 256 Mb DRAMs”, IEEE Circuit and Devices Mag., pp. 17–26 (Jan. 1990).Google Scholar
2. Grant, F.A., “Properties of Rutile (Titanium Dioxide)”, Rev. Mod. Phys. 31, 646 (1959).Google Scholar
3. Samsonov, G.V., ed., The Oxide Handbook, 3rd ed., p. 212 (Plenum, New York, 1982).Google Scholar
4. Takeuchi, M., Itoh, T., and Nagasaka, H., “Dielectric properties of sputtered TiO2 films”, Thin Solid Films 51, 83 (1978).Google Scholar
5. Morris, H.B., U.S. Patent No. 4200474, assigned to Texas Instruments, Inc., “Method of depositing titanium dioxide (rutile) as a gate dielectric for MIS device fabrication (1980).Google Scholar
6. Fukushima, K. and Yamada, I., “Electrical properties of TiO2 films deposited by a reactive-ionized cluster beam”, J. Appl. Phys. 65, 619 (1989).Google Scholar
7. Burns, G.P., Baldwin, I.S., Hastings, M.P., and Wilkes, J.G., “Plasma oxidation of titanium thin films to form dielectric layers”, J. Appl. Phys. 66, 2320 (1989).Google Scholar
8. Suni, I., Sigurd, D., Ho, K.T., and Nicolet, M.A., “Thermal oxidation of reactively sputtered titanium nitride and hafnium nitride films”, J. Electrochem. Soc. 130, 1210 (1983).Google Scholar
9. Wittmer, M., Noser, J., and Melchior, H., “Oxidation kinetics of TiN thin films”, J. Appl. Phys. 52, 6659 (1981).Google Scholar
10. Kohlhase, A., Mandl, M., and Pamler, W., “Performance and failure mechanisms of TiN diffusion barrier layers in submicron devices”, J. Appl. Phys. 65, 2464 (1989).Google Scholar
11. Thorpe, T.P., Morrish, A.A., and Qadri, S.B., “Effect of grain size on the oxidation kinetics of sputtered titanium nitride films”, J. Vac. Sci. Technol. A6, 1727 (1988).Google Scholar
12. Tompkins, H.G., “Oxidation of titanium nitride in room and in dry O2 ”, J. Appl. Phys. 70, 3876 (1991).Google Scholar