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The Formation of Tin-Encapsulated Silver Films by Nitridation of Silver-refractory metal alloys in NH3

Published online by Cambridge University Press:  15 February 2011

Daniel Adams ,
T. L. Alford ,
T. Laursen ,
F. Deng ,
R. Morton  and
S. S. Lau
Daniel Adams
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006
T. L. Alford
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006
T. Laursen
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006
F. Deng
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093
R. Morton
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093
S. S. Lau
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093
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Abstract

Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in NH3 at temperatures between 400-700°C for various times. Upon annealing Ti segregates to the surface and alloy/SiO2 interface to form a TiN(O) surface layer and a TiO/Ti5Si3 interfacial bilayer structure. Resistivity values of 2.5 μΩ-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 337
Copyright
Copyright © Materials Research Society 1996

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