Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-26T21:33:11.550Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of Three Red-Shift Emissions in Heavily Germanium-Doped P-Type GaAs Grown By MBE

Published online by Cambridge University Press:  25 February 2011

Y. Makita ,
A. Yamada ,
H. Shibata ,
H. Asakura ,
N. Ohnishi ,
A. C. Beye ,
K. M. Mayer  and
N. Kutsuwada
Y. Makita
Affiliation:
Electrotechnical, Laboratory, 1-1-4 Umezono, Tsukuba-shi, 305, Japan.
A. Yamada
Affiliation:
Electrotechnical, Laboratory, 1-1-4 Umezono, Tsukuba-shi, 305, Japan.
H. Shibata
Affiliation:
Electrotechnical, Laboratory, 1-1-4 Umezono, Tsukuba-shi, 305, Japan.
H. Asakura
Affiliation:
Tokai University, 1117 Kitakaname, Hiratsuka-shi, 259-12 Japan.
N. Ohnishi
Affiliation:
Informex Incorporated, Limited, 3-15-10 Hiyoshi, Kohoku-ku, Yokohama-shi, Kanagawa-ken 223, Japan
A. C. Beye
Affiliation:
Electrotechnical, Laboratory, 1-1-4 Umezono, Tsukuba-shi, 305, Japan.
K. M. Mayer
Affiliation:
Electrotechnical, Laboratory, 1-1-4 Umezono, Tsukuba-shi, 305, Japan.
N. Kutsuwada
Affiliation:
Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro-machi, Saitama-ken.
Get access

Abstract

Molecular beam epitaxy (MBE) of Ge-doped GaAs was made, in which As4 to Ga flux ratio :γ and Ge concentration :[Ge] were used as growth parameters. Photoluminescence (PL) spectra at 2K for slightly Ge-doped GaAs revealed that for γ =1 the emission of excitons bound to neutral Ge acceptors (A°,X) was the dominant one. With increasing γ ,(A°,X) was found to be steeply suppressed and at around γ=1.1, (A°,X) was totally quenched. For γ higher than 1.4, the emission of excitons bound at neutral Ge donors (D°,X) was gradually enhanced and for γ =11, (D°,X) became the principal one. Through van der Pauw measurements, samples with [Ge] around 1×1017cm-3 presented type conversion at around γ=1.7. In this series, the sample with γ =1.0 indicated a strong specific emission, [ g-g], which is formed just below (A°,X) and exhibited a strong energy shift towards lower energy sides (red shift) with increasing [Ge]. [g-g] was theoretically attributed to the pairs between excited-state acceptors. Since [g-g] is known to be easily quenched by small amount of donors, the formation of predominant [g-g] for γ =1 assures that very low-compensated p-type GaAs were grown by using this typically am-photeric impurity. We fabricated a series of p-type Ge-doped GaAs by keeping γ =1 in which the net hole concentration, │ NA-ND │ as high as 1×1020cm-3 was attained. We found four emissions which exhibited significant energy shifts with increasing │ NA-ND │ . From │ NA-ND │ ~1×1016 cm-3, [g-g] begins to appear as a dominant emission and at │ NA-ND │ ~ 1×1017 cm-3, another red shift emission, [g-g]2 begins to be formed parralelly on the higher energy side of [g-g]. It is interesting to note that both [g-g] and [g-g]2 seem to be totally quenched by the further increase of [Ge]. The emission due to band to Ge acceptor,(e,Ge) does not change its central energy until [Ge]= 5×-1018cm-3 and for larger [Ge] it turned into a new broad emission,[g-g]β showing a steep red energy shift. [g-g]α was formed on the higher energy side of (e,Ge) and indicated a systematic blue energy shift with growing [Ge] larger than 1×1019cm-3. [g-g]α was theoretically explained to be the emission due to the pairs between ground-state acceptors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 115
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Li, Ai-zhen, Milnes, A.G., Chen, Z.Y., Shao, Y.F., and Wang, S.B., J. Vac. Sci. Technol., B3 (2). 629 (1985).Google Scholar
2 Makita, Y., Tanaka, H., Mori, M., Ohnishi, N., Phelan, P., Shigetomi, S., Shibata, H., and Matsumori, T., J.Appl.Phys., 65, 248 (1989).Google Scholar
3 Satoh, M., Kuriyama, K., and Makita, Y., J.Appl.Phys., 65, 2248 (1989).Google Scholar
4 Heckingbottom, R. and Davies, G.J., J. Crystal Growth, 50, 644 (1980).Google Scholar
5 Bebb, H.B. and Williams, E.K., Semiconductors and Semimetals Vol. 8, ed. Willardson, R.K. and Beer, A.C. (Academic Press, New York, 1972), P.181.Google Scholar
6 Makita, Y., Takeuchi, Y., Ohnishi, N., Nomura, T., Kudo, K., Tanaka, H., Lee, H-C., Mori, M., and Mitsuhashi, Y., Appl. Phys. Lett., 49, 1184 (1986).Google Scholar
7 Koteles, E.S., Johnson, L., Salerno, J.P., and Vessel, M.O., Phys.Rev.Lett., 55, 867 – (1985).Google Scholar
8 Makita, Y., Nomura, T., Yokota, M., Matsumori, T., Izumi, T., Takeuchi, Y., and Kudo, K., A.P.L. 47 (6), 623 (1985).Google Scholar
9 Makita, Y., Mori, M., Lee, H-C., Kanayama, T., Ohnishi, N., Phelan, P. and Matsumori, T., Mal. Res.Soc.Symp.Proc. Vol.126, 171 (1988).Google Scholar
10 Makita, Y., Mori, M., Ohnishi, N., Phelan, P., Taguchi, T., Sugiyama, Y., Tacano, M., Mat. Res. Soc.Proc. Vol. 102, p 175 (1988).Google Scholar
11 Ohnishi, N., Makita, Y., Irie, K., Nomura, T., Tanaka, H., Mori, M., Mitsuhashi, Y., J.Appl. Phys. 60, 2502 (1986).Google Scholar
12 PheIan, P., Makita, Y., Shibata, H., Yamada, A., Ohnishi, N., and Beye, A.C., Proceedings of the Intel-national Conference of the Science and Technology of Detect Control in Semiconductors (Sep.1989 Yokohama).Google Scholar
13 Nomura, T., Makita, Y., Irie, K., Ohnishi, N., Kudo, K., Tanaka, H., and Mitsuhashi, Y., AppJ. Phys. Lett., .48, 1743 (1986).Google Scholar
14 Ohnishi, N., Makita, Y., Mori, M., Irie, K., Takeuchi, Y., and Shigetomi, S., J. Appl. Phys., 62, 1833 (1987).Google Scholar
15 Ohnishi, N., Makita, Y., Shibata, H., Beye, A.C., Yamada, A., and Mori, M..,to be published in Mat.Res. Soc.Proc.(1989, May, San Diego).Google Scholar