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Formation of Silicon-on-Insulator Films from Powders

Published online by Cambridge University Press:  15 February 2011

Kamesh V. Gadepally ,
Roger M. Hawk  and
William D. Brown
Kamesh V. Gadepally
Affiliation:
Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
Roger M. Hawk
Affiliation:
University of Arkansas at Little Rock, Department of Electronics and Instrumentation, Little Rock, AR 72204
William D. Brown
Affiliation:
University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701
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Abstract

Silicon powders have been successfully deposited by a corona discharge assisted electrostatic process on insulating, semiconducting, and conducting substrates. Subsequently, the deposits were heat treated and films have been formed. We present data pertatining to silicon films on insulators. The insulating surfaces used were sapphire, SiO2 on Si, and Si3N4 on Si. The electrical, chemical, and physical characteristics of these films are presented along with the time and temperature effects on the film formation. The impact of the above method with emphasis to the microelectronics industry will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 234: Symposium V – Modern Perspectives on Thermoelectrics and Related Materials , 1991 , 213
Copyright
Copyright © Materials Research Society 1991

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References

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