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Formation of Self-Assembled Nanometer-Scale InP Islands on Silicon Substrates

Published online by Cambridge University Press:  10 February 2011

A.S. Bakin ,
D. Piester ,
H.-H. Wehmann ,
A.A. Ivanov ,
A. Schlachetzki  and
K.D. Becker
A.S. Bakin
Affiliation:
Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Straße 66, D-38106 Braunschweig, Germany
D. Piester
Affiliation:
Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Straße 66, D-38106 Braunschweig, Germany
H.-H. Wehmann
Affiliation:
Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Straße 66, D-38106 Braunschweig, Germany
A.A. Ivanov
Affiliation:
Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Straße 66, D-38106 Braunschweig, Germany
A. Schlachetzki
Affiliation:
Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Straße 66, D-38106 Braunschweig, Germany
K.D. Becker
Affiliation:
Institut fur Festödrperchemie, Abteilung Physikalische Chemie, Technische Universität Braunschweig, Hans-Sommer-Straße 10, D-38106 Braunschweig, Germany
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Abstract

Three-dimensional islands of InP have been reproducibly grown in the Stranski-Krastanow growth mode on Si (001) and (111) by using metal-organic vapor phase epitaxy in order to obtain nanometer-scale quantum dots. Atomic-force microscopy was used to determine the morphology of the samples and to evaluate the dimensions of the islands. Formation of three-dimensional islands with densities as high as 2.5×1010 cm−2 and small sizes have been observed. The evolution of island morphology is explained in terms of strain-relaxing mechanisms at the first stages of InP/Si heteroepitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 27
Copyright
Copyright © Materials Research Society 2000

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References

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