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Formation of Oxide Layers by High Dose Implantation into Silicon

Published online by Cambridge University Press:  25 February 2011

S.S. Gill  and
I. H. Wilson
S.S. Gill
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcestershire WR14 3PS, U.K.
I. H. Wilson
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, U.K.
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Abstract

Single crystal silicon was implanted with 80, 120, 160 and 240 keV oxygen ions. Rutherford backscattering (RBS) analysis was used to obtain the implanted oxygen profile and the oxygen to silicon ratio in the implanted layer for doses in the range 1016 to 1.5 × 1018 O2+ cm−2 for room temperature implants. The depth and the thickness of the buried oxide layer has been measured as a function of implantation energy and oxygen dose. Chemical formation of stoichiometric SiO2 was confirmed by infra-red (IR) spectroscopy. Both RBS and IR indicate that once a surface oxide layer is formed for very high dose levels, the layer thickness decreases with increasing implanted dose beyond a critical dose level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 275
Copyright
Copyright © Materials Research Society 1984

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References

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