Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-26T11:20:29.866Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of High Quality β-FeSi2 by Pre-Amorphization-Enhanced Diffusion

Published online by Cambridge University Press:  01 February 2011

Y. Murakami ,
A. Kenjo ,
T. Sadoh ,
T. Yoshitake  and
M. Miyao
Y. Murakami
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
A. Kenjo
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
T. Sadoh
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
T. Yoshitake
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga 816–8580, Japan
M. Miyao
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
Get access

Abstract

Effects of Ar+ ion irradiation on solid-phase growth of β-FeSi2 have been investigated. Si substrates were amorphized with Ar+ ions (20 keV) before Fe (15 nm) deposition to form Fe(15 nm)/a-Si/c-Si stacked structures. As a reference, Fe/c-Si stacked structures were prepared. In the initial stage of annealing at 800 °C, β-FeSi2 formation was enhanced for pre-amorphized samples, which was due to the enhanced diffusion of silicidation species. In the long time annealing, β-FeSi2 formation proceeded by thermal equilibrium diffusion, and the formation rate was not affected by pre-amorphization. Crystal quality of β-FeSi2 was improved by pre-amorphization. The pre-amorphization enhanced diffusion is useful for formation of high quality β-FeSi2 thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R9.16
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Leong, D., Harry, M., Reeson, K. J., and Homewood, K. P., Nature 387, 686 (1997).Google Scholar
2. Maeda, Y., Akita, T., Umezawa, K., Miyake, K., and Sagawa, M., Proc. SPIE 3419, 354 (1998).Google Scholar
3. Tanaka, M., Kumagai, Y., Suemasu, T., and Hasegawa, F., Appl. Surf. Sci. 117/118, 303 (1997).Google Scholar
4. Suemasu, T., Iikura, Y., Takakura, K., and Hasegawa, F., J. Lumin. 87–89, 528 (2000).Google Scholar
5. Yang, Z., Shao, G., and Homewood, K. P., Appl. Phys. Lett. 68, 1784 (1996).Google Scholar
6. Sugiyama, M. and Maeda, Y., Thin Solid Films 381, 225 (2001).Google Scholar
7. Mantl, S., Nucl. Instrum. Methods B 80/81, 862 (1993).Google Scholar
8. Ziegler, J. F., “Computer Code TRIM 90”, IBM-Research, New York (1990).Google Scholar
9. Ziegler, J. F., http://www.srim.org/.Google Scholar