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Formation of Defects in MBE Re-Grown GaAs Films on GaAs/AlGaAs Heterostructures

Published online by Cambridge University Press:  11 February 2011

M. Lamberti ,
V. Tokranov ,
R. Moore ,
M. Yakimov ,
A. Katsnelson  and
S. Oktyabrsky
M. Lamberti
Affiliation:
School of NanoSciences and NanoEngineering, University at Albany – SUNY Albany, NY 12203, U.S.A.
V. Tokranov
Affiliation:
School of NanoSciences and NanoEngineering, University at Albany – SUNY Albany, NY 12203, U.S.A.
R. Moore
Affiliation:
School of NanoSciences and NanoEngineering, University at Albany – SUNY Albany, NY 12203, U.S.A.
M. Yakimov
Affiliation:
School of NanoSciences and NanoEngineering, University at Albany – SUNY Albany, NY 12203, U.S.A.
A. Katsnelson
Affiliation:
School of NanoSciences and NanoEngineering, University at Albany – SUNY Albany, NY 12203, U.S.A.
S. Oktyabrsky
Affiliation:
School of NanoSciences and NanoEngineering, University at Albany – SUNY Albany, NY 12203, U.S.A.
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Abstract

In the present work, we examine the formation of defects on the sidewall slope in 1 μm - thick GaAs layers regrown on GaAs/AlGaAs heterostructures. Site-specific TEM specimens of sidewall slopes are obtained using focused ion beam combined with lift-out method. TEM analysis shows planar defects, such as stacking faults and microtwins, dislocations and large twinned areas, nucleating on the AlGaAs surfaces. SIMS and EDX reveal an increase in carbon and oxygen at the interface. The defect density increased with Al content exceeding 1010 cm-2 on Al0.4Ga0.6As. The defect formation is related to the oxidation of Al-containing surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M6.4
Copyright
Copyright © Materials Research Society 2003

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References

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