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The Formation of Cu3Si from Cu/a-Si Multilayers

Published online by Cambridge University Press:  10 February 2011

R. R. Chromik ,
W. K. Neils  and
E. J. Cotts
R. R. Chromik
Affiliation:
Department of Physics, Binghamton University, State University of New York Binghamton, NY 13902-6016
W. K. Neils
Affiliation:
Department of Physics, Binghamton University, State University of New York Binghamton, NY 13902-6016
E. J. Cotts
Affiliation:
Department of Physics, Binghamton University, State University of New York Binghamton, NY 13902-6016
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Abstract

The kinetics of the formation of Cu3Si in Cu/a-Si diffusion couples have been investigated by means of differential scanning calorimetry and x-ray diffraction. Multilayered composites of average stoichiometry Cu3Si were prepared by sputter deposition with individual layer thicknesses varying in different samples between 2 and 100 nm. We observed diffusion limited growth of Cu3 Si upon annealing these diffusion couples below 500 K. Reaction constants were measured for a temperature range of 455 to 495 K for thicknesses of growing Cu3Si between 2.6 and 80 nm. The temperature dependence of the reaction constant, k2, was characterized as k2 = k0 exp(− Ea/kbT) with activation energy, Ea = 1.0 eV/atom and pre-factor, k0 = 1.9×10−3 cm2/s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 481: Symposium P – Science and Technology of Semiconductor Surface Preparation , 1997 , 581
Copyright
Copyright © Materials Research Society 1998

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References

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