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Formation of Buried Two-Dimensional Electron Gas in Gaas by Si Ion Doping Using Mbe-Fib Combined System

Published online by Cambridge University Press:  21 February 2011

J. YANAGISAWA ,
H. Nakayama ,
F. Wakaya ,
Y. Yuba  and
K. Gamo
J. YANAGISAWA
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
H. Nakayama
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
F. Wakaya
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Y. Yuba
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
K. Gamo
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

0.1 and 30 keV Si2+ focused ion beams (FIB) were implanted in two types of GaAs, one of which is semi-insulating (s.i.) GaAs, while the other is grown by molecular beam epitaxy (MBE). Successive regrowth over the implanted surface was performed using MBE-FIB combined system, and the resistance was measured. It was found that for 100 eV Si2+ FIB implantation, the sample was nonconductive without a post annealing at 800°C. After the post annealing, however, the sample became conductive, and the resistance was the same order in magnitude as the sample fabricated using 30 keV Si + FIB irradiation. This suggests a potential of selective formation of Si δ-like doped layers in GaAs and GaAs/AlGaAs using a low-energy FIB.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 701
Copyright
Copyright © Materials Research Society 1996

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