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Formation of Buried Ternary Silicide Layers in Silicon by Ion Beam Synthesis (IBS)

Published online by Cambridge University Press:  25 February 2011

D. Panknin ,
E. Wieser ,
W. Skorupa ,
G. Querner ,
H. Vöhse  and
J. Albrecht
D. Panknin
Affiliation:
Research Center Rossendorf Inc, PF 19, 0–8 051 Dresden, Germany
E. Wieser
Affiliation:
Research Center Rossendorf Inc, PF 19, 0–8 051 Dresden, Germany
W. Skorupa
Affiliation:
Research Center Rossendorf Inc, PF 19, 0–8 051 Dresden, Germany
G. Querner
Affiliation:
Technical University Dresden
H. Vöhse
Affiliation:
Institute Fresenius, Dresden
J. Albrecht
Affiliation:
Institute Fresenius, Dresden
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Abstract

A buried (Fe1−xCox) Si2 (x < 0.2) layer was formed by two step high dose implantation of Fe and Co into {100}-Si with as well as without intermediate annealing between the implantations. The suicide layer remains semiconducting if the temperature of the post implantation annealing is lower than 850°C. The depth distribution of Fe and Co, the phase composition as well as the microstructure of the layer system was investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 111
Copyright
Copyright © Materials Research Society 1993

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References

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