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Formation of Aluminum Films Using a High Rate ICB Source

Published online by Cambridge University Press:  28 February 2011

H. Tsukazaki
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661, Japan
G. Okamoto
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661, Japan
Y. Hashimoto
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661, Japan
K. Yamanishi
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661, Japan
M. Tanaka
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661, Japan
S. Yasunaga
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661, Japan
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Abstract

An ionized cluster beam (ICB) source has been developed for high rate deposition, and its possible application to ultra large scale integrated circuit (ULSI) metallization was investigated. Aluminum films were deposited onto oxidized silicon wafers using the ICB source. It was shown that an electrical resistivity was almost the same as the value for bulk aluminum, and the surface morphology of deposited films was improved by controlling the ionization and acceleration conditions of the cluster beam. It was confirmed that the ICB method showed an excellent coverage profile in contact holes when compared with the conventional sputtering method. Using the directivity of cluster beams, contact holes of 1.5 in aspect ratio were successfully metallized. From these results, it became evident that the ICB source is a favorable method for ULSI metallization.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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