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Formation of A Buried Stacked Insulator by Ion Beam Synthesis

Published online by Cambridge University Press:  28 February 2011

W. Skorupa ,
R. Grotzschel ,
K. Wollschlagbr ,
J. Albrbcht  and
H. Vohse
W. Skorupa
Affiliation:
Central Institute for Nuclear Research, IIM-IMH, POB 19, 0–8051 Dresden, GERMANY
R. Grotzschel
Affiliation:
Central Institute for Nuclear Research, IIM-IMH, POB 19, 0–8051 Dresden, GERMANY
K. Wollschlagbr
Affiliation:
Central Institute for Nuclear Research, IIM-IMH, POB 19, 0–8051 Dresden, GERMANY
J. Albrbcht
Affiliation:
Institute Fresenius, Applied Analysis, 0–8060 Dresden, GERMANY
H. Vohse
Affiliation:
Institute Fresenius, Applied Analysis, 0–8060 Dresden, GERMANY
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Abstract

We report on the formation and properties of a new type of a buried insulator using combined nitrogen/oxygen implantation with two different implantation energies. In this manner, a stacked layer consisting of silicon dioxide above silicon oxynitride above silicon nitride is formed. Experimental results concerning the impurity profiles, the microstructure and compound formation are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 127
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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