Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-24T13:54:39.857Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation and Thermal Stability of End-of-Range Defects in Ge Implanted Silicon

Published online by Cambridge University Press:  22 February 2011

M. Seibt ,
J. Imschweiler  and
H.-A. Hefner
M. Seibt
Affiliation:
IV. Physikalisches Institut der Georg-August Universität Göttingen, Bunsenstr.13-15, D-37073 Göttingen, Federal Republic of Germany
J. Imschweiler
Affiliation:
TEMIC, TELEFUNKEN microelectronic, GmbH, Theresienstr.2, D-74072 Heilbronn, Federal Republic of Germany
H.-A. Hefner
Affiliation:
TEMIC, TELEFUNKEN microelectronic, GmbH, Theresienstr.2, D-74072 Heilbronn, Federal Republic of Germany
Get access

Abstract

By means of transmission electron microscopy we have studied the redissolution of extended end-of-range defects during high temperature rapid thermal annealing. We find, that after the transformation of initially present {113} stacking faults into energetically more favorable structures, each type of end-of-range defect establishes its individual redissolution rate with {111} faulted loops being the most stable configuration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 167
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Jones, K.S., Prussin, S. and Weber, E.R., Appl. Phys. A 45, 1 (1988)Google Scholar
2 Seibt, M., Imschweiler, J. and Hefher, H.-A., Mat. Res. Soc. Proc. Vol 262, 1103 (1992)Google Scholar
3 Lambert, J.A., Dobson, P.S., Phil. Mag. 44, 1043 (1981)Google Scholar
4 Cerofolini, G.F., Meda, L., Polignano, M., Ottaviani, M.L., Bender, G., Clays, C., Armagliato, A. and Solmi, S., in: Semiconductor Silicon 1986, (The Electrochemical Soc., Pennington), p.706 Google Scholar
5 Jones, K.S. and Venables, D., J. Appl. Phys. 69, 2931 (1991)Google Scholar
6 Seidel, T.E., Lischner, D.J., Pai, C.S., Knoell, R.V., Maher, D.M. and Jacobson, D.C., Nucl. Instr. and Meth. B 7/8, 251 (1985)Google Scholar
7 Jones, K.S., Prussin, S. and Weber, E.R., J. Appl. Phys. 62, 4114 (1987)Google Scholar
8 Prussin, S. and Jones, K.S., Nucl. Instr. and Meth. B 21, 496 (1987)Google Scholar
9 Jones, K.S., Prussin, S. and Weber, E.R. Nucl. Instr. and Meth. B 21, 499 (1987)Google Scholar
10 Seibt, M., Imschweiler, J. and Hefner, H.-A., Inst. Phys. Conf. Ser. No. 134, 137 (1993)Google Scholar
11 Seibt, M., Imschweiler, J. and Hefner, H.-A., Mat.Res.Soc.Proc. Vol. 319, to be publishedGoogle Scholar
12 Bourret, A., Inst. Phys. Conf. Ser. No.87, 39 (1987)Google Scholar
13 Flynn, C.P., Point Defects and Diffusion, (Clarendon Press, Oxford 1972)Google Scholar