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Formation and Properties of Porous GaAs

Published online by Cambridge University Press:  10 February 2011

P. Schmuki ,
D. J. Lockwood ,
J. W. Fraser ,
M. J. Graham  and
H. S. Isaacs
P. Schmuki
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada, K1A 0R6
D. J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada, K1A 0R6
J. W. Fraser
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada, K1A 0R6
M. J. Graham
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada, K1A 0R6
H. S. Isaacs
Affiliation:
Materials Science Division, Department of Applied Science, Brookhaven National Lab., Upton, NY 11973, USA
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Abstract

Porous structures on n-type GaAs (100) can be grown electrochemically in chloridecontaining solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existence of a critical onset potential for pore formation (PFP). The PFP is strongly dependent on the doping level of the sample and the presence of surface defects. Good agreement between the PFP and the breakdown voltage of the space charge layer is found. Surface analytical investigations by EDX, AES and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only be observed after attack has been initiated. Photoluminescence measurements reveal – under certain conditions – visible light emission from the porous structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 431: Symposium P – Microporous and Macroporous Materials , 1996 , 439
Copyright
Copyright © Materials Research Society 1996

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